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MOS INTEGRATED CIRCUIT

PD44324082, 44324092, 44324182, 44324362

36M-BIT DDRII SRAM

2-WORD BURST OPERATION

Document No. M16780EJ3V0DS00 (3rd edition)
Date Published March 2006 NS CP(K)
Printed in Japan

DATA SHEET

2003

Description

The

PD44324082 is a 4,194,304-word by 8-bit, the

PD44324092 is a 4,194,304-word by 9-bit, the

PD44324182 is a

2,097,152-word by 18-bit and the

PD44324362 is a 1,048,576-word by 36-bit synchronous double data rate static RAM

fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

The

PD44324082,

PD44324092,

PD44324182 and

PD44324362 integrate unique synchronous peripheral circuitry

and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive edge of K

and K#.

These products are suitable for application which require synchronous operation, high speed, low voltage, high

density and wide bit configuration.

These products are packaged in 165-pin PLASTIC BGA.

Features

· 1.8 ± 0.1 V power supply
· 165-pin PLASTIC BGA package (13 x 15)
· HSTL Interface
· DLL circuitry for wide output data valid window and future frequency scaling
· Pipelined double data rate operation
· Common data input/output bus
· Two-tick burst for low DDR transaction size
· Two input clocks (K and K#) for precise DDR timing at clock rising edges only
· Two output clocks (C and C#) for precise flight time
and clock skew matching-clock and data delivered together to receiving device
· Internally self-timed write control
· Clock-stop capability. Normal operation is restored in 1,024 cycles after clock is resumed.
· User programmable impedance output
· Fast clock cycle time : 3.7 ns (270 MHz), 4.0 ns (250 MHz), 5.0 ns (200 MHz)
· Simple control logic for easy depth expansion
· JTAG boundary scan

<R>

Data Sheet M16780EJ3V0DS

PD44324082, 44324092, 44324182, 44324362

Ordering Information

Part number

Cycle

Clock

Organization Core Supply

I/O

Package

Time Frequency

(word

bit)

Voltage

Interface

ns MHz

PD44324082F5-E37-EQ2

3.7

270

4M x 8-bit

1.8 ± 0.1

HSTL

165-pin PLASTIC

PD44324082F5-E40-EQ2

4.0

250

BGA (13 x 15)

PD44324082F5-E50-EQ2 5.0

200

PD44324092F5-E37-EQ2

3.7

270

4M x 9-bit

PD44324092F5-E40-EQ2 4.0

250

PD44324092F5-E50-EQ2 5.0

200

PD44324182F5-E37-EQ2

3.7

270

2M x 18-bit

PD44324182F5-E40-EQ2 4.0

250

PD44324182F5-E50-EQ2 5.0

200

PD44324362F5-E37-EQ2

3.7

270

1M x 36-bit

PD44324362F5-E40-EQ2 4.0

250

PD44324362F5-E50-EQ2 5.0

200

PD44324082F5-E37-EQ2-A

3.7

270

4M x 8-bit

PD44324082F5-E40-EQ2-A 4.0 250

PD44324082F5-E50-EQ2-A 5.0 200

PD44324092F5-E37-EQ2-A

3.7

270

4M x 9-bit

PD44324092F5-E40-EQ2-A 4.0 250

PD44324092F5-E50-EQ2-A 5.0 200

PD44324182F5-E37-EQ2-A

3.7

270

2M x 18-bit

PD44324182F5-E40-EQ2-A 4.0 250

PD44324182F5-E50-EQ2-A 5.0 200

PD44324362F5-E37-EQ2-A

3.7

270

1M x 36-bit

PD44324362F5-E40-EQ2-A 4.0 250

PD44324362F5-E50-EQ2-A 5.0 200

Remarks 1. QDR Consortium standard package size is 13 x 15 and 15 x 17.

The footprint is commonly used.

2. Products with -A at the end of the part number are lead-free products.

<R>

Data Sheet M16780EJ3V0DS

PD44324082, 44324092, 44324182, 44324362

Pin Configurations

×××# indicates active low signal.

165-pin PLASTIC BGA (13 x 15)

(Top View)

[

PD44324082F5-EQ2]

[

PD44324082F5-EQ2-A]

1 2 3 4 5 6 7 8 9 10

A CQ# V

NW1#

K# NC LD# A A CQ

NC NC NC A NC K

NW0#

A NC NC

DQ3

C NC NC NC V

A A A V

NC NC NC

D NC NC NC V

NC NC NC

E NC NC DQ4 V

Q V

Q NC NC DQ2

F NC NC NC V

Q V

Q NC NC NC

G NC NC DQ5 V

Q V

Q NC NC NC

H DLL# V

REF

Q V

REF

J NC NC NC V

Q V

Q NC DQ1 NC

K NC NC NC V

Q V

Q NC NC NC

L NC DQ6 NC V

Q V

Q NC NC DQ0

M NC NC NC V

NC NC NC

N NC NC NC V

A A A V

NC NC NC

DQ7

A A C A A NC

TDO

TCK

A A A C# A A A

TMS

TDI

: Address inputs

TMS

: IEEE 1149.1 Test input

DQ0 to DQ7

: Data inputs / outputs

TDI

: IEEE 1149.1 Test input

LD#

: Synchronous load

TCK

: IEEE 1149.1 Clock input

R, W#

: Read Write input

TDO

: IEEE 1149.1 Test output

NW0#, NW1#

: Nibble Write data select

REF

: HSTL input reference input

K, K#

: Input clock

: Power Supply

C, C#

: Output clock

: Power Supply

CQ, CQ#

: Echo clock

Ground

: Output impedance matching

: No connection

DLL#

: DLL disable

Remarks 1. Refer to Package Drawing for the index mark.

2. 2A and 7A are expansion addresses: 2A for 72Mb and 7A for 144Mb.

2A of this product can also be used as NC.

Data Sheet M16780EJ3V0DS

PD44324082, 44324092, 44324182, 44324362

165-pin PLASTIC BGA (13 x 15)

(Top View)

[

PD44324092F5-EQ2]

[

PD44324092F5-EQ2-A]

1 2 3 4 5 6 7 8 9 10

A CQ# V

NC K# NC LD# A A CQ

NC NC NC A NC K

BW0#

A NC NC

DQ4

C NC NC NC V

A A A V

NC NC NC

D NC NC NC V

NC NC NC

E NC NC DQ5 V

Q V

Q NC NC DQ3

F NC NC NC V

Q V

Q NC NC NC

G NC NC DQ6 V

Q V

Q NC NC NC

H DLL# V

REF

Q V

REF

J NC NC NC V

Q V

Q NC DQ2 NC

K NC NC NC V

Q V

Q NC NC NC

L NC DQ7 NC V

Q V

Q NC NC DQ1

M NC NC NC V

NC NC NC

N NC NC NC V

A A A V

NC NC NC

DQ8

A A C A A NC

DQ0

TDO

TCK

A A A C# A A A

TMS

TDI

: Address inputs

TMS

: IEEE 1149.1 Test input

DQ0 to DQ8

: Data inputs / outputs

TDI

: IEEE 1149.1 Test input

LD#

: Synchronous load

TCK

: IEEE 1149.1 Clock input

R, W#

: Read Write input

TDO

: IEEE 1149.1 Test output

BW0#

: Byte Write data select

REF

: HSTL input reference input

K, K#

: Input clock

: Power Supply

C, C#

: Output clock

: Power Supply

CQ, CQ#

: Echo clock

Ground

: Output impedance matching

: No connection

DLL#

: DLL disable

Remarks 1. Refer to Package Drawing for the index mark.

2. 2A and 7A are expansion addresses: 2A for 72Mb and 7A for 144Mb.

2A of this product can also be used as NC.

Data Sheet M16780EJ3V0DS

PD44324082, 44324092, 44324182, 44324362

165-pin PLASTIC BGA (13 x 15)

(Top View)

[

PD44324182F5-EQ2]

[

PD44324182F5-EQ2-A]

1 2 3 4 5 6 7 8 9 10

A CQ# V

BW1#

K# NC LD# A A CQ

B NC DQ9 NC A NC K BW0# A NC NC DQ8

C NC NC NC V

A A0 A V

NC DQ7 NC

D NC NC DQ10 V

NC NC NC

E NC NC DQ11 V

Q V

Q NC NC DQ6

F NC DQ12 NC V

Q V

Q NC NC DQ5

G NC NC DQ13 V

Q V

Q NC NC NC

H DLL# V

REF

Q V

REF

J NC NC NC V

Q V

Q NC DQ4 NC

K NC NC DQ14 V

Q V

Q NC NC DQ3

L NC DQ15 NC V

Q V

Q NC NC DQ2

M NC NC NC V

NC DQ1 NC

N NC NC DQ16 V

A A A V

NC NC NC

DQ17

A A C A A NC

DQ0

TDO

TCK

A A A C# A A A

TMS

TDI

A0, A

: Address inputs

TMS

: IEEE 1149.1 Test input

DQ0 to DQ17

: Data inputs / outputs

TDI

: IEEE 1149.1 Test input

LD#

: Synchronous load

TCK

: IEEE 1149.1 Clock input

R, W#

: Read Write input

TDO

: IEEE 1149.1 Test output

BW0#, BW1#

: Byte Write data select

REF

: HSTL input reference input

K, K#

: Input clock

: Power Supply

C, C#

: Output clock

: Power Supply

CQ, CQ#

: Echo clock

Ground

: Output impedance matching

: No connection

DLL#

: DLL disable

Remarks 1. Refer to Package Drawing for the index mark.

2. 2A and 7A are expansion addresses: 2A for 72Mb and 7A for 144Mb.

2A of this product can also be used as NC.

Data Sheet M16780EJ3V0DS

PD44324082, 44324092, 44324182, 44324362

165-pin PLASTIC BGA (13 x 15)

(Top View)

[

PD44324362F5-EQ2]

[

PD44324362F5-EQ2-A]

1 2 3 4 5 6 7 8 9 10

A CQ# V

BW2#

BW1#

LD# A V

B NC DQ27 DQ18 A BW3# K BW0# A NC NC DQ8

C NC NC DQ28 V

A A0 A V

NC DQ17

DQ7

D NC DQ29 DQ19 V

NC NC DQ16

E NC NC DQ20 V

Q V

Q NC DQ15 DQ6

F NC DQ30 DQ21 V

Q V

Q NC NC DQ5

G NC DQ31 DQ22 V

Q V

Q NC NC DQ14

H DLL# V

REF

Q V

REF

J NC NC DQ32 V

Q V

Q NC DQ13 DQ4

K NC NC DQ23 V

Q V

Q NC DQ12 DQ3

L NC DQ33 DQ24 V

Q V

Q NC NC DQ2

M NC NC DQ34 V

NC DQ11

DQ1

N NC DQ35 DQ25 V

A A A V

NC NC DQ10

DQ26

A A C A A NC

DQ9

DQ0

TDO

TCK

A A A C# A A A

TMS

TDI

A0, A

: Address inputs

TMS

: IEEE 1149.1 Test input

DQ0 to DQ35

: Data inputs / outputs

TDI

: IEEE 1149.1 Test input

LD#

: Synchronous load

TCK

: IEEE 1149.1 Clock input

R, W#

: Read Write input

TDO

: IEEE 1149.1 Test output

BW0# to BW3#

: Byte Write data select

REF

: HSTL input reference input

K, K#

: Input clock

: Power Supply

C, C#

: Output clock

: Power Supply

CQ, CQ#

: Echo clock

Ground

: Output impedance matching

: No connection

DLL#

: DLL disable

Remarks 1. Refer to Package Drawing for the index mark.

2. 2A and 10A are expansion addresses: 10A for 72Mb and 2A for 144Mb.

2A and 10A of this product can also be used as NC.

Data Sheet M16780EJ3V0DS

PD44324082, 44324092, 44324182, 44324362

Pin Identification

(1/2)

Symbol Description

A0
A

Synchronous Address Inputs: These inputs are registered and must meet the setup and hold times around the
rising edge of K. All transactions operate on a burst of two words (one clock period of bus activity). A0 is used
as the lowest order address bit permitting a random starting address within the burst operation on x18 and x36
devices. These inputs are ignored when device is deselected, i.e., NOP (LD# = H).

DQ0 to DQxx Synchronous Data IOs: Input data must meet setup and hold times around the rising edges of K and K#. Output

data is synchronized to the respective C and C# data clocks or to K and K# if C and C# are tied to HIGH.
x8 device uses DQ0 to DQ7.
x9 device uses DQ0 to DQ8.
x18 device uses DQ0 to DQ17.
x36 device uses DQ0 to DQ35.

LD#

Synchronous Load: This input is brought LOW when a bus cycle sequence is to be defined. This definition
includes address and read/write direction. All transactions operate on a burst of 2 data (one clock period of bus
activity).

R, W#

Synchronous Read/Write Input: When LD# is LOW, this input designates the access type (READ when R, W#
is HIGH, WRITE when R, W# is LOW) for the loaded address. R, W# must meet the setup and hold times
around the rising edge of K.

BWx#
NWx#

Synchronous Byte Writes (Nibble Writes on x8): When LOW these inputs cause their respective byte or nibble
to be registered and written during WRITE cycles. These signals must meet setup and hold times around the
rising edges of K and K# for each of the two rising edges comprising the WRITE cycle. See Pin Configurations
for signal to data relationships.
x8 device uses NW0#, NW1#.
x9 device uses BW0#.
x18 device uses BW0#, BW1#.
x36 device uses BW0# to BW3#.
See Byte Write Operation for relation between BWx#, NWx# and Dxx.

K, K#

Input Clock: This input clock pair registers address and control inputs on the rising edge of K, and registers data
on the rising edge of K and the rising edge of K#. K# is ideally 180 degrees out of phase with K. All
synchronous inputs must meet setup and hold times around the clock rising edges.

C, C#

Output Clock: This clock pair provides a user controlled means of tuning device output data. The rising edge of
C# is used as the output timing reference for first output data. The rising edge of C is used as the output
reference for second output data. Ideally, C# is 180 degrees out of phase with C. When use of K and K# as the
reference instead of C and C#, then fixed C and C# to High. Operation cannot be guaranteed unless C and C#
are fixed to High (i.e. toggle of C and C#)

CQ, CQ#

Synchronous Echo Clock Outputs. The rising edges of these outputs are tightly matched to the synchronous
data outputs and can be used as a data valid indication. These signals run freely and do not stop when Q
tristates.
If C and C# are stopped (if K and K# are stopped in the single clock mode), CQ and CQ# will also stop.

Output Impedance Matching Input: This input is used to tune the device outputs to the system data bus
impedance. DQ, CQ and CQ# output impedance are set to 0.2 x RQ, where RQ is a resistor from this bump to
ground. The output impedance can be minimized by directly connect ZQ to V

Q. This pin cannot be

connected directly to GND or left unconnected.

DLL#

DLL Disable: When debugging the system or board, the operation can be performed at a clock frequency
slower than TKHKH (MAX.) without the DLL circuit being used, if DLL# = L. The AC/DC characteristics cannot
be guaranteed, however.

TMS
TDI

IEEE 1149.1 Test Inputs: 1.8V I/O levels. These balls may be left Not Connected if the JTAG function is not
used in the circuit.

TCK

IEEE 1149.1 Clock Input: 1.8V I/O levels. This pin must be tied to V

if the JTAG function is not used in the

circuit.

TDO

IEEE 1149.1 Test Output: 1.8V I/O level.

REF

HSTL Input Reference Voltage: Nominally V

Q/2. Provides a reference voltage for the input buffers.

VDD

Power Supply: 1.8V nominal. See DC Characteristics and Operating Conditions for range.

VDDQ

Power Supply: Isolated Output Buffer Supply. Nominally 1.5V. 1.8V is also permissible. See DC Characteristics
and Operating Conditions for range.

Data Sheet M16780EJ3V0DS

PD44324082, 44324092, 44324182, 44324362

Power-on Sequence

The following two timing charts show the recommended power-on sequence, i.e., when starting the clock after

Q stable and when starting the clock before V

Q stable.

1. Clock starts after V

Q stable

The clock is supplied from a controller.

(a)

Q Stable (<

±0.1 V DC per 50 ns)

DLL#

Clock Start

Normal Operation
Start

Clock

Fix high (or tied to V

20 ns (MIN.)

1,024 cycles or more

Stable Clock

Note

Note Input a stable clock from the start.

(b)

DLL#

Switched to high after Clock is stable.

Unstable Clock

(level, frequency)

Q Stable (<

±0.1 V DC per 50 ns)

Clock

Clock Start

Normal Operation
Start

1,024 cycles or more

Stable Clock

(c)

DLL#

30 ns. (MIN.)

Clock Stop

Q Stable (<

±0.1 V DC per 50 ns)

Fix high (or tied to V

Unstable Clock

(level, frequency)

Clock

Clock Start

Normal Operation
Start

1,024 cycles or more

Stable Clock

Data Sheet M16780EJ3V0DS

PD44324082, 44324092, 44324182, 44324362

Burst Sequence

Linear Burst Sequence Table

[

PD44324182,

PD44324362]

External Address

1st Internal Burst Address

Truth Table

Operation LD#

CLK

WRITE cycle

Data in

Load address, input write data on two

Input data

D(A1)

D(A2)

consecutive K and K# rising edge

Input clock

K(t+1)

K#(t+1)

READ cycle

Data out

Load address, read data on two

Output data

Q(A1)

Q(A2)

consecutive C and C# rising edge

Output clock

C#(t+1)

C(t+2)

NOP (No operation)

High-Z

Clock stop

Stopped

Previous state

Remarks 1. H : High level, L : Low level,

× : don't care, : rising edge.

2. Data inputs are registered at K and K# rising edges. Data outputs are delivered at C and C# rising edges

except if C and C# are HIGH then Data outputs are delivered at K and K# rising edges.

3. All control inputs in the truth table must meet setup/hold times around the rising edge (LOW to HIGH) of

K. All control inputs are registered during the rising edge of K.

4. This device contains circuitry that ensure the outputs to be in high impedance during power-up.

5. Refer to state diagram and timing diagrams for clarification.

6. A1 refers to the address input during a WRITE or READ cycle. A2 refers to the next internal burst

address in accordance with the linear burst sequence.

7. It is recommended that K = K# = C = C# when clock is stopped. This is not essential but permits most

rapid restart by overcoming transmission line charging symmetrically.

Data Sheet M16780EJ3V0DS

PD44324082, 44324092, 44324182, 44324362

Byte Write Operation

[

PD44324082]

Operation K

NW0#

NW1#

Write DQ0 to DQ7

0 0

Write DQ0 to DQ3

0 1

Write DQ4 to DQ7

1 0

Write nothing

1 1

Remark H : High level, L : Low level,

: rising edge.

[

PD44324092]

Operation K

BW0#

Write DQ0 to DQ8

Write nothing

Remark H : High level, L : Low level,

: rising edge.

[

PD44324182]

Operation K

BW0#

BW1#

Write DQ0 to DQ17

0 0

Write DQ0 to DQ8

0 1

Write DQ9 to DQ17

1 0

Write nothing

1 1

Remark H : High level, L : Low level,

: rising edge.

[

PD44324362]

Operation

BW0# BW1# BW2# BW3#

Write DQ0 to DQ35

0 0 0 0

Write DQ0 to DQ8

0 1 1 1

Write DQ9 to DQ17

1 0 1 1

Write DQ18 to DQ26

1 1 0 1

Write DQ27 to DQ35

1 1 1 0

Write nothing

1 1 1 1

Remark H : High level, L : Low level,

: rising edge.

Data Sheet M16780EJ3V0DS

PD44324082, 44324092, 44324182, 44324362

Electrical Specifications

Absolute Maximum Ratings

Parameter Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Supply voltage

0.5

+2.5

Output supply voltage

0.5

Input voltage

0.5

+ 0.5 (2.5 V MAX.)

Input / Output voltage

I/O

0.5

+ 0.5 (2.5 V MAX.)

Operating ambient temperature

°C

Storage temperature

stg

+125

°C

Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.

Recommended DC Operating Conditions (T

= 0 to 70

°C)

Parameter Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Note

Supply voltage

1.7

1.9

Output supply voltage

1.4

High level input voltage

IH (DC)

REF

+ 0.1

+ 0.3

1, 2

Low level input voltage

IL (DC)

0.3

REF

0.1

1, 2

Clock input voltage

0.3

+ 0.3

1, 2

Reference voltage

REF

0.68

0.95

Notes 1. During normal operation, V

Q must not exceed V

2. Power-up: V

Q + 0.3 V and V

1.7 V and V

1.4 V for t 200 ms

Recommended AC Operating Conditions (T

= 0 to 70

°C)

Parameter Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Note

High level input voltage

IH (AC)

REF

+ 0.2

Low level input voltage

IL (AC)

REF

0.2

Note 1. Overshoot: V

IH (AC)

+ 0.7 V for t

TKHKH/2

Undershoot:

IL (AC)

0.5 V for t TKHKH/2

Control input signals may not have pulse widths less than TKHKL (MIN.) or operate at cycle rates less than
TKHKH (MIN.).

Data Sheet M16780EJ3V0DS

PD44324082, 44324092, 44324182, 44324362

DC Characteristics (T

= 0 to 70°C, V

= 1.8 ± 0.1 V)

Parameter Symbol Test

condition

MIN.

TYP. MAX. Unit

Note

x8,

x18

x36

Input leakage current

I/O leakage current

Operating supply current

or V

, -E37

690 970 1,090 mA

(Read Write cycle)

I/O

= 0 mA

-E40

650 900 1,000

Cycle = MAX.

-E50

550 750 850

Standby supply current

SB1

or V

, -E37

520

(NOP)

I/O

= 0 mA

-E40

500

Cycle = MAX.

-E50

400

High level output voltage

OH(Low)

0.1 mA

0.2

Q V

Note1

Q/20.12 V

Q/2+0.12 V

Low level output voltage

OL(Low)

0.1 mA

0.2 V

Note2

Q/20.12 V

Q/2+0.12 V

Notes 1. Outputs are impedance-controlled. | I

| = (V

Q/2)/(RQ/5) ±15 % for values of 175

RQ 350 .

2. Outputs are impedance-controlled. I

= (V

Q/2)/(RQ/5) ±15 % for values of 175

RQ 350 .

3. AC load current is higher than the shown DC values.

4. HSTL outputs meet JEDEC HSTL Class I and standards.

Capacitance (T

A =

°C, f = 1MHz)

Parameter Symbol

Test

conditions

MIN.

TYP.

MAX.

Unit

Input capacitance (Address, Control)

= 0 V

Input / Output capacitance

I/O

= 0 V

(DQ, CQ, CQ#)

Clock Input capacitance

clk

= 0 V

Remark These parameters are periodically sampled and not 100% tested.

Thermal Resistance

Parameter Symbol

Test

conditions

MIN.

TYP.

MAX.

Unit

Thermal resistance

j-a

22.6

°C/W

(junction ambient)

Thermal resistance

j-c

2.0

°C/W

(junction case)

Remark These parameters are simulated under the condition of air flow velocity = 1 m/s.

<R>

Data Sheet M16780EJ3V0DS

PD44324082, 44324092, 44324182, 44324362

Read and Write Cycle

Parameter Symbol

-E37 -E40 -E50

Unit Note

(270 MHz)

(250 MHz)

(200 MHz)

MIN. MAX. MIN. MAX. MIN. MAX.

Clock

Average Clock cycle time (K, K#, C, C#)

TKHKH

3.7 8.4 4.0 8.4 5.0 8.4 ns

Clock phase jitter (K, K#, C, C#)

TKC var

0.2 0.2 0.2

Clock HIGH time (K, K#, C, C#)

TKHKL

1.5 1.6 2.0 ns

Clock LOW time (K, K#, C, C#)

TKLKH

1.5 1.6 2.0 ns

Clock (active high)

TKHK#H

1.7 1.8 2.2 ns

to Clock# (active low)

K#, CC#)

Clock# (active low)

TK#HKH

1.7 1.8 2.2 ns

to Clock (active high)

(K#

K, C#C)

Clock to data clock

250 to 270 MHz TKHCH

1.65

C, K#C#)

200 to 250 MHz

0 1.8 0 1.8

167 to 200 MHz

0 2.3 0 2.3 0 2.3

133 to 167 MHz

0 2.8 0 2.8 0 2.8

< 133 MHz

0 3.55 0 3.55 0 3.55

DLL lock time (K, C)

TKC lock

1,024 1,024 1,024

Cycle

K static to DLL reset

TKC reset

30 30 30

Output Times

C, C# HIGH to output valid

TCHQV

0.45 0.45 0.45

C, C# HIGH to output hold

TCHQX

0.45

0.45 ns

C, C# HIGH to echo clock valid

TCHCQV

0.45 0.45 0.45

C, C# HIGH to echo clock hold

TCHCQX

0.45

0.45 ns

CQ, CQ# HIGH to output valid

TCQHQV

0.3 0.3 0.35

CQ, CQ# HIGH to output hold

TCQHQX

0.3

0.35

C HIGH to output High-Z

TCHQZ

0.45 0.45 0.45

C HIGH to output Low-Z

TCHQX1

0.45

0.45 ns

Setup Times

Address valid to K rising edge

TAVKH

0.5 0.5 0.6 ns

Synchronous load input (LD#),

TIVKH

0.5 0.5 0.6 ns

read write input (R, W#) valid to

K rising edge

Data inputs and write data select

TDVKH

0.35 0.35 0.4 ns

inputs (BWx#, NWx#) valid to

K, K# rising edge

Hold Times

K rising edge to address hold

TKHAX

0.5 0.5 0.6 ns

K rising edge to

TKHIX

0.5 0.5 0.6 ns

synchronous load input (LD#),

read write input (R, W#) hold

K, K# rising edge to data inputs and

TKHDX

0.35 0.35 0.4 ns

write data select inputs (BWx#, NWx#)

hold

<R>

Data Sheet M16780EJ3V0DS

PD44324082, 44324092, 44324182, 44324362

Notes 1. When debugging the system or board, these products can operate at a clock frequency slower than TKHKH

(MAX.) without the DLL circuit being used, if DLL# = L. The AC/DC characteristics cannot be guaranteed,

however.

2. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge. TKC var

(MAX.) indicates a peak-to-peak value.

3. V

slew rate must be less than 0.1 V DC per 50 ns for DLL lock retention.

DLL lock time begins once V

and input clock are stable.

It is recommended that the device is kept NOP (LD# = H) during these cycles.

4. Echo clock is very tightly controlled to data valid / data hold. By design, there is a

± 0.1 ns variation from

echo clock to data. The data sheet parameters reflect tester guardbands and test setup variations.

5. This is a synchronous device. All addresses, data and control lines must meet the specified setup

and hold times for all latching clock edges.

Remarks 1. This parameter is sampled.

2. Test conditions as specified with the output loading as shown in AC Test Conditions

unless otherwise noted.

3. Control input signals may not be operated with pulse widths less than TKHKL (MIN.).

4. If C, C# are tied HIGH, K, K# become the references for C, C# timing parameters.

Q is 1.5 V DC.

Data Sheet M16780EJ3V0DS

PD44324082, 44324092, 44324182, 44324362

Read and Write Timing

TKHKH

TKHAX

Q01

Q11

LD#

Address

Q02

R, W#

Qx2

Q12

TKHK#H

TK#HKH

CQ#

TKHCH

TCHQX1

TCHQV

TCHQX

TCHQZ

TKHKL TKLKH TKHKH TKHK#H

D21

D31

D22

D32

TDVKH

TKHDX

TDVKH

TKHDX

NOP

READ

(burst of 2)

READ

(burst of 2)

NOP

WRITE

(burst of 2)

WRITE

(burst of 2)

TKHKL

TIVKH

TKLKH

TKHIX

TKLKH

TCHCQV

TCHCQX

TCQHQX

TCQHQV

READ

(burst of 2)

TCHQX

Q41

Q42

TK#HKH

TAVKH

TKHCH

Remarks 1. Q01 refers to output from address A0.

Q02 refers to output from the next internal burst address following A0, etc.

2. Outputs are disabled (high impedance) 2.5 clocks after the last READ (LD# = L, R, W# = H) is input in

the sequences of [READ]-[NOP].

3. The second NOP cycle at the cycle "5" is not necessary for correct device operation;

however, at high clock frequencies it may be required to prevent bus contention.

Data Sheet M16780EJ3V0DS

PD44324082, 44324092, 44324182, 44324362

JTAG Specification

These products support a limited set of JTAG functions as in IEEE standard 1149.1.

Test Access Port (TAP) Pins

Pin name

Pin assignments

Description

TCK 2R

Test Clock Input. All input are captured on the rising edge of TCK and all outputs

propagate from the falling edge of TCK.

TMS 10R

Test Mode Select. This is the command input for the TAP controller state machine.

TDI

11R

Test Data Input. This is the input side of the serial registers placed between TDI and
TDO. The register placed between TDI and TDO is determined by the state of the TAP
controller state machine and the instruction that is currently loaded in the TAP instruction.

TDO

Test Data Output. This is the output side of the serial registers placed between TDI and
TDO. Output changes in response to the falling edge of TCK.

Remark The device does not have TRST (TAP reset). The Test-Logic Reset state is entered while TMS is held high

for five rising edges of TCK. The TAP controller state is also reset on the SRAM POWER-UP.

JTAG DC Characteristics (T

= 0 to 70°C, V

= 1.8 ± 0.1 V, unless otherwise noted)

Parameter Symbol Conditions MIN.

TYP.

MAX.

Unit

Note

JTAG Input leakage current

0 V

5.0 +5.0

JTAG I/O leakage current

0 V

5.0 +5.0

Outputs

disabled

JTAG input high voltage

1.3

+0.3 V

JTAG input low voltage

0.3

+0.5 V

JTAG output high voltage

OH1

| I

OHC

| = 100

1.6 V

OH2

OHT

| = 2 mA

1.4

JTAG output low voltage

OL1

OLC

= 100

0.2

OL2

OLT

= 2 mA

0.4

Data Sheet M16780EJ3V0DS

PD44324082, 44324092, 44324182, 44324362

Scan Register Definition (1)

Description

Instruction register

The instruction register holds the instructions that are executed by the TAP controller when it is
moved into the run-test/idle or the various data register state. The register can be loaded when it is
placed between the TDI and TDO pins. The instruction register is automatically preloaded with the
IDCODE instruction at power-up whenever the controller is placed in test-logic-reset state.

Bypass register

The bypass register is a single bit register that can be placed between TDI and TDO. It allows serial
test data to be passed through the RAMs TAP to another device in the scan chain with as little delay
as possible.

ID register

The ID Register is a 32 bit register that is loaded with a device and vendor specific 32 bit code when
the controller is put in capture-DR state with the IDCODE command loaded in the instruction register.
The register is then placed between the TDI and TDO pins when the controller is moved into shift-DR
state.

Boundary register

The boundary register, under the control of the TAP controller, is loaded with the contents of the
RAMs I/O ring when the controller is in capture-DR state and then is placed between the TDI and
TDO pins when the controller is moved to shift-DR state. Several TAP instructions can be used to
activate the boundary register.
The Scan Exit Order tables describe which device bump connects to each boundary register
location. The first column defines the bit's position in the boundary register. The second column is
the name of the input or I/O at the bump and the third column is the bump number.

Scan Register Definition (2)

Bit size

Unit

Instruction register

bit

Bypass register

bit

ID register

bit

Boundary register

109

bit

ID Register Definition

Part number

Organization ID [31:28] vendor revision no.

ID [27:12] part no.

ID [11:1] vendor ID no.

ID [0] fix bit

PD44324082

4M x 8

XXXX

0000 0000 0011 1101

00000010000

PD44324092

4M x 9

XXXX

0000 0000 0011 1110

00000010000

PD44324182

2M x 18

XXXX

0000 0000 0011 1111

00000010000

PD44324362

1M x 36

XXXX

0000 0000 0100 0000

00000010000

Data Sheet M16780EJ3V0DS

PD44324082, 44324092, 44324182, 44324362

SCAN Exit Order

Bit

Signal name

Bump

Bit

Signal name Bump

Bit Signal

name Bump

no. x8 x9 x18 x36 ID no. x8 x9 x18 x36 ID no. x8 x9 x18 x36 ID

6R 37 NC NC NC NC 10D 73 NC NC NC NC 2C

6P 38 NC NC NC NC 9E 74 DQ4 DQ5

DQ11

DQ20 3E

3 A 6N

DQ7 DQ17 10C

DQ29 2D

7P 40 NC NC NC DQ16 11D 76 NC NC NC NC 2E

7N 41 NC NC NC NC 9C 77 NC NC NC NC 1E

7R 42 NC NC NC NC 9D 78 NC NC

DQ12

DQ30 2F

7 A 8R

DQ3 DQ4 DQ8 DQ8

11B

DQ21 3F

8P 44 NC NC NC DQ7

11C 80 NC NC NC NC 1G

9R 45 NC NC NC NC 9B 81 NC NC NC NC 1F

10 NC DQ0

DQ0

DQ0 11P 46 NC NC NC NC 10B 82 DQ5 DQ6

DQ13

DQ22 3G

11 NC NC NC DQ9 10P 47

11A 83 NC NC NC

DQ31 2G

12 NC NC NC NC 10N 48 A A A V

10A 84

DLL#

13 NC NC NC NC 9P 49

9A 85 NC NC NC NC 1J

14 NC NC DQ1

DQ11 10M 50

8B 86 NC NC NC NC 2J

15 NC NC NC

DQ10 11N 51

7C 87 NC NC

DQ14

DQ23 3K

16 NC NC NC NC 9M 52 A A A0 A0 6C 88 NC NC NC

DQ32 3J

17 NC NC NC NC 9N 53

LD#

8A 89 NC NC NC NC 2K

18 DQ0 DQ1 DQ2 DQ2 11L 54 NC NC NC BW1#

90 NC NC NC NC 1K

19 NC NC NC DQ1 11M 55

NW0# BW0# BW0# BW0#

7B 91 DQ6 DQ7

DQ15

DQ33 2L

20 NC NC NC NC 9L 56

6B 92 NC NC NC

DQ24 3L

21 NC NC NC NC 10L 57

6A 93 NC NC NC NC 1M

22 NC NC DQ3

DQ3 11K 58 NC NC NC BW3#

5B 94 NC NC NC NC 1L

23 NC NC NC

DQ12 10K 59

NW1# NC

BW1# BW2#

5A 95 NC NC

DQ16

DQ25 3N

24 NC NC NC NC 9J 60

4A 96 NC NC NC

DQ34 3M

25 NC NC NC NC 9K 61

5C 97 NC NC NC NC 1N

26 DQ1 DQ2 DQ4 DQ13 10J 62

98 NC NC NC NC 2M

27 NC NC NC DQ4 11J 63

3A 99 DQ7 DQ8

DQ17

DQ26 3P

28 ZQ 11H

64 V

100

DQ35 2N

29 NC NC NC NC 10G 65

CQ#

1A 101 NC NC NC NC 2P

30 NC NC NC NC 9G 66 NC NC DQ9 DQ27

2B 102 NC NC NC NC 1P

31 NC NC DQ5

DQ5 11F 67 NC NC NC DQ18

3B 103

32 NC NC NC

DQ14 11G 68 NC NC NC NC 1C 104

33 NC NC NC NC 9F 69 NC NC NC NC 1B 105

34 NC NC NC NC 10F 70 NC NC DQ10 DQ19

3D 106

35 DQ2 DQ3 DQ6 DQ6 11E 71 NC NC NC DQ28

107

36 NC NC NC

DQ15 10E 72 NC NC NC NC 1D 108

109

Internal

Remark Bump ID 10A of bit no. 48 can also be used as NC if the product is x36.

Bump ID 2A of bit no. 64 can also be used as NC. The register always indicates a low level, however.

Data Sheet M16780EJ3V0DS

PD44324082, 44324092, 44324182, 44324362

JTAG Instructions

Instructions Description

EXTEST

The EXTEST instruction allows circuitry external to the component package to be tested. Boundary-
scan register cells at output pins are used to apply test vectors, while those at input pins capture test
results. Typically, the first test vector to be applied using the EXTEST instruction will be shifted into the
boundary scan register using the PRELOAD instruction. Thus, during the update-IR state of EXTEST,
the output drive is turned on and the PRELOAD data is driven onto the output pins.

IDCODE

The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in
capture-DR mode and places the ID register between the TDI and TDO pins in shift-DR mode. The
IDCODE instruction is the default instruction loaded in at power up and any time the controller is
placed in the test-logic-reset state.

BYPASS

When the BYPASS instruction is loaded in the instruction register, the bypass register is placed
between TDI and TDO. This occurs when the TAP controller is moved to the shift-DR state. This
allows the board level scan path to be shortened to facilitate testing of other devices in the scan path.

SAMPLE / PRELOAD

SAMPLE / PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE /
PRELOAD instruction is loaded in the instruction register, moving the TAP controller into the capture-
DR state loads the data in the RAMs input and DQ pins into the boundary scan register. Because the
RAM clock(s) are independent from the TAP clock (TCK) it is possible for the TAP to attempt to
capture the I/O ring contents while the input buffers are in transition (i.e., in a metastable state).
Although allowing the TAP to sample metastable input will not harm the device, repeatable results
cannot be expected. RAM input signals must be stabilized for long enough to meet the TAPs input
data capture setup plus hold time (t

plus t

). The RAMs clock inputs need not be paused for any

other TAP operation except capturing the I/O ring contents into the boundary scan register. Moving
the controller to shift-DR state then places the boundary scan register between the TDI and TDO pins.

SAMPLE-Z

If the SAMPLE-Z instruction is loaded in the instruction register, all RAM DQ pins are forced to an
inactive drive state (high impedance) and the boundary register is connected between TDI and TDO
when the TAP controller is moved to the shift-DR state.

JTAG Instruction Coding

IR2 IR1 IR0 Instruction Note

0 0 0 EXTEST

0 0 1 IDCODE

0 1 0 SAMPLE-Z 1

0 1 1 RESERVED 2

SAMPLE / PRELOAD

1 0 1 RESERVED 2

1 1 0 RESERVED 2

1 1 1 BYPASS

Notes 1. TRISTATE all DQ pins and CAPTURE the pad values into a SERIAL SCAN LATCH.

2. Do not use this instruction code because the vendor uses it to evaluate this product.

Data Sheet M16780EJ3V0DS

PD44324082, 44324092, 44324182, 44324362

Output Pin States of CQ, CQ# and Q

Instructions

Control-Register Status

Output Pin Status

Note

CQ,CQ#

EXTEST 0

Update

Hi-Z

Update

IDCODE 0

SRAM

SAMPLE-Z 0

Hi-Z

SAMPLE 0

SRAM

BYPASS 0

SRAM

Remark The output pin statuses during each instruction vary according

to the Control-Register status (value of Boundary Scan

There are three statuses:

Update : Contents of the "Update Register" are output to

the output pin (QDR Pad).

SRAM : Contents of the SRAM internal output "SRAM

Output" are output to the output pin (QDR Pad).

Hi-Z : The output pin (QDR Pad) becomes Hi-Z by

controlling of the "Hi-Z JTAG ctrl".

The Control-Register status is set during Update-DR at the

EXTEST or SAMPLE instruction.

SRAM

CAPTURE

Boundary Scan
Register

Update

QDR

Pad

SRAM

Output

Driver

Hi-Z

JTAG ctrl

Hi-Z

Update

SRAM

Output

Data Sheet M16780EJ3V0DS

PD44324082, 44324092, 44324182, 44324362

Boundary Scan Register Status of Output Pins CQ, CQ# and Q

Instructions

SRAM Status

Boundary Scan Register Status

Note

CQ,CQ#

EXTEST READ

(Lo-Z)

Pad Pad

NOP

(Hi-Z)

Pad

IDCODE

READ (Lo-Z)

No definition

NOP

(Hi-Z)

SAMPLE-Z READ

(Lo-Z)

Pad Pad

NOP

(Hi-Z)

Pad

SAMPLE READ

(Lo-Z)

Internal

NOP

(Hi-Z)

Internal

Pad

BYPASS

READ (Lo-Z)

No definition

NOP

(Hi-Z)

Remark The Boundary Scan Register statuses during execution each

instruction vary according to the instruction code and SRAM

operation mode.

There are two statuses:

Pad

: Contents of the output pin (QDR Pad) are captured

in the "CAPTURE Register" in the Boundary Scan

Internal : Contents of the SRAM internal output "SRAM

Output" are captured in the "CAPTURE Register"

in the Boundary Scan Register.

Pad

Internal

SRAM

Output

Driver

Update

QDR

Pad

Hi-Z

JTAG ctrl

CAPTURE

SRAM

Output

Boundary Scan
Register

Data Sheet M16780EJ3V0DS

PD44324082, 44324092, 44324182, 44324362

VOLTAGE APPLICATION WAVEFORM AT INPUT PIN

Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the

CMOS device stays in the area between V

(MAX) and V

(MIN) due to noise, etc., the device may

malfunction. Take care to prevent chattering noise from entering the device when the input level is fixed,

and also in the transition period when the input level passes through the area between V

(MAX) and

(MIN).

HANDLING OF UNUSED INPUT PINS

Unconnected CMOS device inputs can be cause of malfunction. If an input pin is unconnected, it is

possible that an internal input level may be generated due to noise, etc., causing malfunction. CMOS

devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed

high or low by using pull-up or pull-down circuitry. Each unused pin should be connected to V

or GND

via a resistor if there is a possibility that it will be an output pin. All handling related to unused pins must

be judged separately for each device and according to related specifications governing the device.

PRECAUTION AGAINST ESD

A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and

ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as

much as possible, and quickly dissipate it when it has occurred. Environmental control must be

adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators that

easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static

container, static shielding bag or conductive material. All test and measurement tools including work

benches and floors should be grounded. The operator should be grounded using a wrist strap.

Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for

PW boards with mounted semiconductor devices.

STATUS BEFORE INITIALIZATION

Power-on does not necessarily define the initial status of a MOS device. Immediately after the power

source is turned ON, devices with reset functions have not yet been initialized. Hence, power-on does

not guarantee output pin levels, I/O settings or contents of registers. A device is not initialized until the

reset signal is received. A reset operation must be executed immediately after power-on for devices

with reset functions.

POWER ON/OFF SEQUENCE

In the case of a device that uses different power supplies for the internal operation and external

interface, as a rule, switch on the external power supply after switching on the internal power supply.

When switching the power supply off, as a rule, switch off the external power supply and then the

internal power supply. Use of the reverse power on/off sequences may result in the application of an

overvoltage to the internal elements of the device, causing malfunction and degradation of internal

elements due to the passage of an abnormal current.

The correct power on/off sequence must be judged separately for each device and according to related

specifications governing the device.

INPUT OF SIGNAL DURING POWER OFF STATE

Do not input signals or an I/O pull-up power supply while the device is not powered. The current

injection that results from input of such a signal or I/O pull-up power supply may cause malfunction and

the abnormal current that passes in the device at this time may cause degradation of internal elements.

Input of signals during the power off state must be judged separately for each device and according to

related specifications governing the device.

NOTES FOR CMOS DEVICES

PD44324082, 44324092, 44324182, 44324362

The information in this document is current as of March, 2006. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.

The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.

(Note)

M8E 02. 11-1

(1)

(2)

"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).

Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.

"Standard":

"Special":

"Specific":

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